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CM50MXA-24S Datasheet, PDF (7/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
VGE=15 V
13
Short-
circuited
40
32
48/49
IC
14/15
V
44/45
VGE=15 V
18
Short-
circuited
33
32
48/49
IC
19/20
V
44/45
VGE=15 V
23
Short-
circuited
31
32
48/49
IC
24/25
V
44/45
VGE=15 V
GB
Es
P1
V
B
IC
N1
Short-
circuited
GUP
VGE=15 V
GUN
Es
P1
V
U
IC
N1
G-E
GVP-V, GVN-Es,
short-circuited GWP-W, GWN-Es,
GB-Es
UP / UN IGBT
Short-
circuited
GVP
VGE=15 V
GVN
Es
P1
V
V
IC
N1
Short-
circuited
GWP
VGE=15 V
GWN
Es
P1
V
W
IC
N1
G-E
GUP-U, GUN-Es,
short-circuited GWP-W, GWN-Es,
GB-Es
VP / VN IGBT
G-E
GUP-U, GUN-Es,
short-circuited GVP-V, GVN-Es,
GB-Es
WP / WN IGBT
VCEsat / ClampDi VF test circuit
Short-
circuited
13
Short-
circuited
40
32
48/49
IE
14/15
V
44/45
Short-
circuited
18
Short-
circuited
33
32
48/49
IE
19/20
V
44/45
Short-
circuited
23
Short-
circuited
31
32
48/49
IE
24/25
V
44/45
V
48/49
IF
52/53
Short-
circuited
41
32
44/45
G-E
short-circuited
GUP-U, GUN-Es,
GVP-V, GVN-Es,
GWP-W, GWN-Es
Brake IGBT / ClampDi
V
54/55/56
IF
1/2
59/60/61
Short-
circuited
GUP
Short-
circuited
GUN
Es
P1
V
U
IE
N1
Short-
circuited
GVP
Short-
circuited
GVN
Es
P1
V
V
IE
N1
Short-
circuited
GWP
Short-
circuited
GWN
Es
P1
V
W
IE
N1
P
V
R
IF
N
G-E
GVP-V, GVN-Es,
short-circuited GWP-W, GWN-Es,
GB-Es
UP / UN FWDi
G-E
GUP-U, GUN-Es,
short-circuited GWP-W, GWN-Es,
GB-Es
VP / VN FWDi
G-E
GUP-U, GUN-Es,
short-circuited GVP-V, GVN-Es,
GB-Es
WP / WN FWDi
VEC / ConvDi VF test circuit
ConvDi (ex. phase-R)
* In the above test circuit, should use all three main pin terminals (P1/N1/P/N/U/V/W) for connection with the terminals and the current source.
Publication Date : September 2012
7
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