CM50MXA-24S Datasheet, PDF (8/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
T _j =25 °C
100
V_GE=20 V
15 V
80
13.5 V
(Chip)
12 V
60
11 V
40
10 V
20
9V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V_CE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
T _j =25 °C
10
(Chip)
8
I_C=100 A
I_C=50 A
6
I_C=20 A
4
2
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE V_GE (V)
Publication Date : September 2012
8
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
V_GE=15 V
3.5
(Chip)
3
T_j =150 °C
2.5
T_j =125 °C
2
1.5
T _j =25 °C
1
0.5
0
0
20
40
60
80
100
COLLECTOR CURRENT I_C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
100
(Chip)
T_j =150 °C
10
T_j =125 °C
T _j =25 °C
1
0
0.5
1
1.5
2
2.5
3
EMITTER-COLLECTOR VOLTAGE V_EC (V)