CM50MXA-24S Datasheet, PDF (5/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
2. Junction temperature (T _j ) should not increase beyond T _{j m a x} rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T _j ) dose not exceed T _{j m a x} rating.
4. Case temperature (T_C) and heat sink temperature (T _s ) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
5. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
mounting side
Y
X
mounting side
-:Concave
mounting side
+:Convex
6. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit.
7. B_{(25 / 50)}

ln(
R ₂₅
R₅₀
)
/(
1
T₂₅

1
T₅₀
)
,
R₂₅: resistance at absolute temperature T₂₅ [K]; T₂₅=25 [°C]+273.15=298.15 [K]
R₅₀: resistance at absolute temperature T₅₀ [K]; T₅₀=50 [°C]+273.15=323.15 [K]
8. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"ST2.6×10 or ST2.6×12 self tapping screw"
The length of the screw depends on the thickness of the PCB.
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
V_CC
V_GEon
(DC) Supply voltage
Gate (-emitter drive) voltage
R_G
External gate resistance
Conditions
Limits
Unit
Min.
Typ.
Max.
Applied across P-N/P1-N1 terminals
-
600
850
V
Applied across GB-Es1/
G*P-*/G*N-Es(*=U, V, W) terminals
13.5
15.0
16.5
V
Per switch
Inverter IGBT 13
Brake IGBT 18
-
130
Ω
-
180
Publication Date : September 2012
5