CM1200DC-34S Datasheet, PDF (9/11 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE NSULATED TYPE

< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
1
R_th(j-c)Q = 18.5K/kW
R_th(j-c)D = 42.0K/kW
0.8
0.6
Z  R 1exp n
th( jc) ^{(t) }
i1

i


 ^{ }
 _

t


 ^{ i }

Ri [K/kW] :
i [sec.] :
1
0.0096
0.0001
2
0.1893
0.0058
3
0.4044
0.0602
4
0.3967
0.3512
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
3000
2500
VCC  1200V, VGE = ±15V
T_j = 150°C, RG(off)  3.3Ω
2000
1500
1000
500
0
0
500
1000
1500
2000
Collector-Emitter Voltage [V]
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
10000
8000
V_CC  1200V, V_GE = ±15V
R_G(on)1.3Ω, R_G(off)3.3Ω
T_j = 150°C, tpsc  10µs
6000
4000
2000
0
0
500
1000
1500
2000
Collector-Emitter Voltage [V]
Feb 2013 _(HVM-1068)
9