CM1200DC-34S Datasheet, PDF (3/11 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE NSULATED TYPE

< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol
Item
Conditions
td(off)
tf
Eoff(10%)
Eoff
VEC
trr
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 5)
VCC = 850 V
IC = 1200 A
VGE = ±15 V
RG(off) = 3.3 Ω
Ls = 70 nH
Inductive load
Turn-off switching energy ^{(Note 6)}
Emitter-collector voltage
(Note 2)
IE = 1200 A ^{(Note 4)}
VGE = 0 V
Reverse recovery time
(Note 2)
Irr
Qrr
Erec(10%)
Erec
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
(Note 2)
(Note 2)
(Note 2)
(Note 5)
VCC = 850 V
IC = 1200 A
VGE = ±15 V
RG(on) = 1.3 Ω
Ls = 70 nH
Inductive load
Reverse recovery energy
(Note 2)
(Note 6)
Limits
Min Typ Max
Unit
Tj = 25°C
— 1.20 —
Tj = 125°C — 1.30 —
µs
Tj = 150°C — 1.32 —
Tj = 25°C
— 0.12 —
Tj = 125°C — 0.15 —
µs
Tj = 150°C — 0.17 —
Tj = 25°C
— 200 —
Tj = 125°C — 280 —
mJ
Tj = 150°C — 310 —
Tj = 25°C
— 260 —
Tj = 125°C — 360 —
mJ
Tj = 150°C — 400 —
Tj = 25°C
— 2.60 —
Tj = 125°C — 2.30 3.00
V
Tj = 150°C — 2.20 —
Tj = 25°C
— 0.22 —
Tj = 125°C — 0.32 —
µs
Tj = 150°C — 0.38 —
Tj = 25°C
— 750 —
Tj = 125°C — 850 —
A
Tj = 150°C — 840 —
Tj = 25°C
— 150 —
Tj = 125°C — 340 —
µC
Tj = 150°C — 400 —
Tj = 25°C
—
70
—
Tj = 125°C — 170 —
mJ
Tj = 150°C — 210 —
Tj = 25°C
—
80
—
Tj = 125°C — 180 —
mJ
Tj = 150°C — 230 —
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part (per 1/2 module)
Junction to Case, FWDi part (per 1/2 module)
Case to heat sink, 1/2 module
· grease = 1W/m k, D(c-s) = 100m
Limits
Min Typ Max
Unit
—
— 18.5 K/kW
—
— 42.0 K/kW
— 16.0 — K/kW
Feb 2013 _(HVM-1068)
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