CM1200DC-34S Datasheet, PDF (6/11 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE NSULATED TYPE

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CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1000
C_ies
100
10
C_oes
1
VGE = 0V, T_j = 25°C
f = 100kHz
0.1
0.1
1
C_res
10
100
Collector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1200
1000
800
VCC = 850V, VGE = ±15V
RG(on) = 1.3Ω, R_G(off) = 3.3Ω
T_j = 125°C, Inductive load
E_on
600
E_off
400
200
0
0
E_rec
500 1000 1500 2000
Collector Current [A]
2500
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 850V, IC = 1200A
15
T_j = 25°C
10
5
0
-5
-10
-15
0
5
10
15
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1200
1000
800
VCC = 850V, VGE = ±15V
RG(on) = 1.3Ω, R_G(off) = 3.3Ω
T_j = 150°C, Inductive load
E_on
600
E_off
400
200
0
0
E_rec
500 1000 1500 2000
Collector Current [A]
2500
Feb 2013 _(HVM-1068)
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