CM1200DC-34S Datasheet, PDF (2/11 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE NSULATED TYPE

< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICRM
IE
IERM
Ptot
Viso
Ve
Tjop
Tstg
tpsc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
VGE = 0V
VCE = 0V, Tj = 25 °C
DC, Tc = 110 °C
Pulse ^{(Note 1)}
DC
Pulse ^{(Note 1)}
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
VCC = 1200V, VCE ≤ VCES, VGE =15V, Tj =150°C
Ratings
Unit
1700
V
± 20
V
1200
A
2400
A
1200
A
2400
A
6750
W
4000
V
1320
V
−50 ~ +150
°C
−50 ~ +150
°C
10
s
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Min Typ Max
Unit
ICES
VGE(th)
Collector cutoff current
Gate-emitter threshold voltage
Tj = 25°C
—
— 4.0
VCE = VCES, VGE = 0V
Tj = 125°C —
1.5
—
mA
Tj = 150°C —
7.0
—
VCE = 10 V, IC = 120 mA, Tj = 25°C
5.4 6.0 6.6
V
IGES
Gate leakage current
VGE = VGES, VCE = 0V, Tj = 25°C
−0.5 —
0.5
µA
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Total gate charge
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
VCC = 850V, IC = 1200A, VGE = ±15V
— 216 —
nF
—
8.0
—
nF
—
1.6
—
nF
— 12.0 —
µC
VCEsat
td(on)
Collector-emitter saturation voltage
IC = 1200 A ^{(Note 4)}
VGE = 15 V
Turn-on delay time
Tj = 25°C
— 1.95 —
Tj = 125°C — 2.25 2.70
V
Tj = 150°C — 2.30 —
Tj = 25°C
— 0.60 —
Tj = 125°C — 0.60 —
µs
Tj = 150°C — 0.60 —
tr
Eon(10%)
Turn-on rise time
Turn-on switching energy
(Note 5)
VCC = 850 V
IC = 1200 A
VGE = ±15 V
RG(on) = 1.3 Ω
Ls = 70 nH
Inductive load
Tj = 25°C
— 0.16 —
Tj = 125°C — 0.17 —
µs
Tj = 150°C — 0.18 —
Tj = 25°C
— 260 —
Tj = 125°C — 340 —
mJ
Tj = 150°C — 370 —
Eon
Turn-on switching energy
(Note 6)
Tj = 25°C
— 300 —
Tj = 125°C — 390 —
mJ
Tj = 150°C — 420 —
Feb 2013 _(HVM-1068)
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