CM1200DC-34S Datasheet, PDF (5/11 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE NSULATED TYPE

< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2500
2000
T_j = 125°C
V_GE = 17V
V_GE = 15V
V_GE = 11V
1500
V_GE = 13V
1000
V_GE = 9V
500
0
0
1
2
3
4
5
6
Collector - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
2500
2000
1500
V_GE = 15V
T_j = 125°C
T_j = 25°C
T_j = 150°C
1000
500
0
0
1
2
3
4
Collector-Emitter Saturation Voltage [V]
TRANSFER CHARACTERISTICS
(TYPICAL)
2500
V_CE = 10V
2000
1500
1000
500
T_j = 125°C / 150°C
T_j = 25°C
0
0
5
10
15
Gate - Emitter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
2500
2000
T_j = 125°C
1500
1000
500
T_j = 150°C
T_j = 25°C
0
0
1
2
3
4
Emitter-Collector Voltage [V]
Feb 2013 _(HVM-1068)
5