CM1200DC-34S Datasheet, PDF (4/11 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE NSULATED TYPE

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CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MECHANICAL CHARACTERISTICS
Symbol
Item
Mt
Ms
Mt
m
CTI
da
ds
LP CE
RCC’+EE’
rg
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
TC = 25°C, 1/2 module
TC = 25°C, 1/2 module
Limits
Min Typ Max
Unit
7.0
—
22.0 N·m
3.0
—
6.0 N·m
1.0
—
3.0 N·m
—
0.8
—
kg
600
—
—
—
9.5
—
—
mm
15.0 —
—
mm
—
22
—
nH
— 0.16
—
mΩ
— 0.28 —
Ω
Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Tjopmax rating.
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjopmax rating .
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
Feb 2013 _(HVM-1068)
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