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| CM1200DC-34S Datasheet, PDF (10/11 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE NSULATED TYPE | |||
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< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
30 00
25 00
VCC ï£ 12 00 V, di /d t ï£ 72 00 A/µs
Tj = 1 50° C
20 00
15 00
10 00
5 00
0
0
500
1 000
1 50 0
20 00
Collector-Emitter Voltage [V]
Feb 2013 (HVM-1068)
10
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