CM1200DC-34S Datasheet, PDF (8/11 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE NSULATED TYPE

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CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
10
t_d(off)
VCC = 850V, VGE = ±15V
R_G(on) = 1.3Ω, R_G(off) = 3.3Ω
T_j = 125°C, Inductive load
1
t_d(on)
t_f
0.1
t_r
0.01
100
1000
Collector Current [A]
10000
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
10
t_d(off)
VCC = 850V, VGE = ±15V
R_G(on) = 1.3Ω, R_G(off) = 3.3Ω
T_j = 150°C, Inductive load
1
t_d(on)
t_f
0.1
t_r
0.01
100
1000
Collector Current [A]
10000
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V_CC = 850V, V_GE = ±15V
R_G(on) = 1.3Ω, L_S = 70nH
T_j = 125°C, Inductive load
10000
10
I_rr
1000
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V_CC = 850V, V_GE = ±15V
R_G(on) = 1.3Ω, L_S = 70nH
T_j = 150°C, Inductive load
10000
10
I_rr
1000
1
t_rr
100
0.1
100
1000
Emitter Current [A]
10
10000
1
t_rr
100
0.1
100
1000
Emitter Current [A]
10
10000
Feb 2013 _(HVM-1068)
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