CM1200DC-34S Datasheet, PDF (7/11 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE NSULATED TYPE

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CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
2000
VCC = 850V, IC = 1200A
VGE = ±15V, T_j = 125°C
Inductive load
1500
E_on
1000
500
0
0
E_rec
2
4
6
8
Gate Resistance [Ω]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1000
800
VCC = 850V, IC = 1200A
VGE = ±15V, T_j = 125°C
Inductive load
600
E_off
400
200
0
0
5
10
15
20
Gate Resistance [Ω]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
2000
VCC = 850V, IC = 1200A
VGE = ±15V, T_j = 150°C
Inductive load
1500
E_on
1000
500
0
0
E_rec
2
4
6
8
Gate Resistance [Ω]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1000
800
VCC = 850V, IC = 1200A
VGE = ±15V, T_j = 150°C
Inductive load
E_off
600
400
200
0
0
5
10
15
20
Gate Resistance [Ω]
Feb 2013 _(HVM-1068)
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