CM1200DC-34S Datasheet, PDF (1/11 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE NSULATED TYPE

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CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200DC-34S
 I 1200A _{C ································································}
 V 1700V _{CES ··························································}
 2-element in a Pack
 Insulated Type
 CSTBT™(III) / Soft Recovery Diode
 AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Feb 2013 _(HVM-1068)
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