HAC830CV-M-A-2-A-2 Datasheet, PDF (8/49 Pages) Micronas – Robust Multi-Purpose Programmable Linear Hall-Effect Sensor with Integrated Capacitors

DATA SHEET
HAC 830
3. Functional Description
3.1. General Function
The HAC 830 programmable linear Hall-Effect sensor provides an output signal propor-
tional to the magnetic flux through the Hall plate and proportional to the supply voltage
(ratiometric behavior) as long as the analog output mode is selected.
The external magnetic field component perpendicular to the branded side of the pack-
age generates a Hall voltage. The Hall ICs are sensitive to magnetic north and south
polarity. The Hall voltage is converted to a digital value, processed in the Digital Signal
Processing Unit (DSP) according to the settings of the EEPROM registers, converted to
an output signal. The function and parameters for the DSP are explained in Section 3.2.
on page 11.
The setting of the LOCK register disables the programming of the EEPROM memory for
all time. It also disables the reading of the memory. This register cannot be reset.
As long as the LOCK register is not set, the output characteristic can be adjusted by
programming the EEPROM registers. The IC is addressed by modulating the supply
voltage (see Fig. 3–1). After detecting a command, the sensor reads or writes the mem-
ory and answers with a digital signal on the output pin. The output is switched off during
the communication. Several sensors in parallel to the same supply and ground line can
be programmed individually. The selection of each sensor is done via its output pin.
The open-circuit detection function provides a defined output voltage for the analog out-
put if the VSUP or GND lines are broken.
Internal temperature compensation circuitry and spinning-current offset compensation
enable operation over the full temperature range with minimal changes in accuracy and
high offset stability. The circuitry also reduces offset shifts due to mechanical stress
from the package.
The non-volatile memory consists of redundant and non-redundant EEPROM cells. The
non-redundant EEPROM cells are only used to store production information inside the
sensor.
In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage
protection at all pins.
To improve EMC performance HAC 830 devices integrate two capacitors within the
package, between VSUP and GND and OUT and GND respectively.
Micronas
Feb. 24, 2016; DSH000178_001EN
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