 English |
|
|
|
|
|
|
|
| HAC830CV-M-A-2-A-2 Datasheet, PDF (40/49 Pages) Micronas – Robust Multi-Purpose Programmable Linear Hall-Effect Sensor with Integrated Capacitors | |||
| |||
| ◁ |
DATA SHEET
HAC 830
tr
tf
VSUPH
logical 0
tp0
or
tp0
VSUPL
VSUPH
logical 1
VSUPL
tp0
tp1
tp1
or
tp0
Fig. 6â1: Definition of logical 0 and 1 bit
Table 6â1: Telegram parameters
Symbol Parameter
Pin Min. Typ. Max. Unit Remarks
VSUPL Supply Voltage for Low Level
15
5.6 6
V
during Programming
VSUPH
Supply Voltage for High Level
during Programming
1 6.8 8.0 8.5 V
tr
Rise time
tf
Fall time
tp0
Bit time on VSUP
1ï
ï
0.05 ms see Fig. 6â1 on page 40
1ï
ï
0.05 ms see Fig. 6â1 on page 40
1 1.7 1.75 1.9 ms tp0 is defined through
the Sync Bit
tpOUT
Bit time on output pin
32
3
4
ms tpOUT is defined through
the Acknowledge Bit
tp1
Duty-Cycle Change for logical 1 1, 50 65 80 % % of tp0 or tpOUT
3
VSUP-
PROG
tPROG
trp
tfp
tw
Supply Voltage for
1
Programming the EEPROM
Programming Time for EEPROM 1
Rise time of programming voltage 1
Fall time of programming voltage 1
Delay time of programming volt- 1
age after Acknowledge
12.4 12.5 12.6 V
95 100 105 ms
0.2 0.5 1
ms see Fig. 6â1 on page 40
0
ï
1
ms see Fig. 6â1 on page 40
0.5 0.7 1
ms
Vact
tact
Vout,
deact
Voltage for an Activate pulse
33
4
5
V
Duration of an Activate pulse
3 0.05 0.1 0.2 ms
Output voltage after deactivate 3 0
command
0.1 0.2 V
Micronas
Feb. 24, 2016; DSH000178_001EN
40
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese