HAC830CV-M-A-2-A-2 Datasheet, PDF (38/49 Pages) Micronas – Robust Multi-Purpose Programmable Linear Hall-Effect Sensor with Integrated Capacitors

DATA SHEET
HAC 830
5.4. Ambient Temperature
Due to the internal power dissipation, the temperature on the silicon chip (junction tem-
perature T_J) is higher than the temperature outside the package (ambient temperature
T_A).
T_J = T_A + T
At static conditions and continuous operation, the following equation applies:
T = I_SUP * V_SUP * R_thjX
The X represents junction-to-air or junction-to-case.
In order to estimate the temperature difference T between the junction and the respec-
tive reference (e.g. air, case, or solder point) use the max. parameters for I_SUP, R_thX,
and the max. value for V_SUP from the application.
The following example shows the result for junction-to -air conditions. V_SUP = 5.5 V,
R_thja = 250 K/W and I_SUP = 10 mA the temperature difference T = 13.75 K.
The junction temperature T_J is specified. The maximum ambient temperature T_Amax can
be estimated as:
T_Amax = T_Jmax T
5.5. EMC and ESD
Please contact Micronas for the detailed investigation reports with the EMC and
ESD results.
Micronas
Feb. 24, 2016; DSH000178_001EN
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