N25Q256A13E1240E Datasheet, PDF (83/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A

3V, 256Mb: Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions
Table 41: AC Characteristics and Operating Conditions (Continued)
Parameter
WRITE VOLATILE CONFIGURATION REGISTER cycle
time
WRITE VOLATILE ENHANCED CONFIGURATION
REGISTER cycle time
WRITE NONVOLATILE CONFIGURATION REGISTER
cycle time
WRITE EXTENDED ADDRESS REGISTER cycle time
PAGE PROGRAM cycle time (256 bytes)
Symbol
t_WVCR
t_WRVECR
t_WNVCR
t_WREAR
t_PP
Min
–
–
–
–
–
Typ¹
40
40
0.2
40
0.5
Max
–
–
3
–
5
Unit
ns
ns
s
ns
ms
Notes
7
PAGE PROGRAM cycle time (n bytes)
–
int(n/8) ×
5
ms
7
0.15⁸
PAGE PROGRAM cycle time, V_PP = V_PPH ( 256 bytes)
PROGRAM OTP cycle time (64 bytes)
Subsector ERASE cycle time
t_SSE
Sector ERASE cycle time
t_SE
–
0.4
5
ms
7
–
0.2
–
ms
7
–
0.25
0.8
s
–
0.7
3
s
Sector ERASE cycle time (with V_PP = V_PPH)
Bulk ERASE cycle time
Bulk ERASE cycle time (with V_PP = V_PPH)
–
0.6
3
s
t_BE
–
240
480
s
–
200
480
s
Notes:
1. Typical values given for T_A = 25°C.
2. ^tCH + ^tCL must add up to 1/^fC.
3. Value guaranteed by characterization; not 100% tested.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS
REGISTER WRITE is set to 1.
6. V_PPH should be kept at a valid level until the PROGRAM or ERASE operation has comple-
ted and its result (success or failure) is known.
7. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained with one sequence including all the bytes versus several sequences
of only a few bytes (1 < n < 256).
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4
int(15.3) = 16.
PDF: 09005aef84566603
n25q_256mb_65nm.pdf - Rev. Q 05/13 EN
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