N25Q256A13E1240E Datasheet, PDF (44/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A

3V, 256Mb: Multiple I/O Serial Flash Memory
READ MEMORY Operations
Table 25: Command/Address/Data Lines for READ MEMORY Commands (Continued)
Note 1 applies to entire table
STR Mode
DTR Mode
Data Output
READ
03h
–
–
FAST
READ
0Bh
0Dh
DQ[3:0]
Command Name
DUAL
QUAD
DUAL OUTPUT INPUT/OUTPUT QUAD OUTPUT INPUT/OUTPUT
FAST READ FAST READ FAST READ FAST READ
3Bh
BBh
6Bh
EBh
3Dh
BDh
6Dh
EDh
–
–
DQ[3:0]
DQ[3:0]
Notes:
1. Yes in the "Supported" row for each protocol indicates that the command in that col-
umn is supported; when supported, a command's functionality is identical for the entire
column regardless of the protocol. For example, a FAST READ functions the same for all
three protocols even though its data is input/output differently depending on the pro-
tocol.
2. FAST READ is similar to READ, but requires dummy clock cycles following the address
bytes and can operate at a higher frequency (^fC).
PDF: 09005aef84566603
n25q_256mb_65nm.pdf - Rev. Q 05/13 EN
44
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