N25Q256A13E1240E Datasheet, PDF (81/91 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A

3V, 256Mb: Multiple I/O Serial Flash Memory
DC Characteristics and Operating Conditions
DC Characteristics and Operating Conditions
Table 39: DC Current Characteristics and Operating Conditions
Parameter
Symbol
Test Conditions
Min Max Unit
Input leakage current
I_LI
–
Output leakage current
Standby current
Standby current
I_LO
–
I_CC1
S = V_CC, V_IN = V_SS or V_CC
–
I_CC1
S = V_CC, V_IN = V_SS or V_CC
–
(automotive) ¹
Operating current
(fast-read extended I/O)
I_CC3
C = 0.1V_CC/0.9V_CC at 108 MHz, DQ1 = –
open
C = 0.1V_CC/0.9V_CC at 54 MHz, DQ1 = –
open
Operating current (fast-read dual I/O)
C = 0.1V_CC/0.9V_CC at 108 MHz
–
Operating current (fast-read quad I/O)
Operating current (program)
I_CC4
C = 0.1V_CC/0.9V_CC at 108 MHz
–
S# = V_CC
–
Operating current (write status register)
I_CC5
Operating current (erase)
I_CC6
S# = V_CC
–
S# = V_CC
–
±2
µA
±2
µA
100 µA
150 µA
15
mA
6
mA
18
mA
20
mA
20
mA
20
mA
20
mA
Note: 1. Automotive temperature range = –40°C to 125°C; See also the Part Number Information
table.
Table 40: DC Voltage Characteristics and Operating Conditions
Parameter
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Symbol
V_IL
V_IH
V_OL
V_OH
Conditions
I_OL = 1.6mA
I_OH = –100µA
Min
–0.5
0.7V_CC
–
V_CC - 0.2
Max
0.3V_CC
V_CC + 0.4
0.4
–
Unit
V
V
V
V
PDF: 09005aef84566603
n25q_256mb_65nm.pdf - Rev. Q 05/13 EN
81
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