English
Language : 

N25Q256A11ESF40F Datasheet, PDF (79/87 Pages) Micron Technology – Micron Serial NOR Flash Memory
1.8V, 256Mb: Multiple I/O Serial Flash Memory
DC Characteristics and Operating Conditions
DC Characteristics and Operating Conditions
Table 37: DC Current Characteristics and Operating Conditions
Parameter
Input leakage current
Output leakage current
Standby current
Deep power-down current
Operating current
(fast-read extended I/O)
Operating current (fast-read dual I/O)
Operating current (fast-read quad I/O)
Operating current (program)
Operating current (write status regis-
ter)
Operating current (erase)
Symbol
ILI
ILO
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
Test Conditions
S = VCC, VIN = VSS or VCC
S = VCC, VIN = VSS or VCC
C = 0.1VCC/0.9VCC at 108 MHz, DQ1
= open
C = 0.1VCC/0.9VCC at 54 MHz, DQ1
= open
C = 0.1VCC/0.9VCC at 108 MHz
C = 0.1VCC/0.9VCC at 108 MHz
S# = VCC
S# = VCC
S# = VCC
Min
–
–
–
–
–
–
–
–
–
–
–
Max
±2
±2
100
10
15
6
18
20
20
20
20
Unit
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
Table 38: DC Voltage Characteristics and Operating Conditions
Parameter
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Symbol
VIL
VIH
VOL
VOH
Conditions
IOL = 1.6mA
IOH = –100µA
Min
–0.5
0.7VCC
–
VCC - 0.2
Max
0.3VCC
VCC + 0.4
0.4
–
Unit
V
V
V
V
PDF: 09005aef846a804a
n25q_256mb_1_8V_65nm.pdf - Rev. G 2/2012 EN
79
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.