N25Q256A11ESF40F Datasheet, PDF (20/87 Pages) Micron Technology – Micron Serial NOR Flash Memory

1.8V, 256Mb: Multiple I/O Serial Flash Memory
Nonvolatile and Volatile Registers
Nonvolatile and Volatile Registers
The device features the following volatile and nonvolatile registers that users can access
to store device parameters and operating configurations:
• Status register
• Nonvolatile and volatile configuration registers
• Enhanced volatile configuration register
• Flag status register
• Lock register
Note: The lock register is defined in READ LOCK REGISTER Command.
In addition to these user-accessible registers, the working condition of memory is set by
an internal configuration register that is not directly accessible to users. As shown be-
low, parameters in the internal configuration register are loaded from the nonvolatile
configuration register during each device boot phase or power-on reset. In this sense,
then, the nonvolatile configuration register contains the default settings of memory.
Also, during the life of an application, each time a WRITE VOLATILE or ENHANCED
VOLATILE CONFIGURATION REGISTER command executes to set configuration pa-
rameters in these respective registers, these new settings are copied to the internal con-
figuration register. Therefore, memory settings can be changed in real time. However, at
the next power-on reset, the memory boots according to the memory settings defined
in the nonvolatile configuration register parameters.
Figure 8: Internal Configuration Register
Nonvolatile configuration register
Volatile configuration register
and volatile enhanced
configuration register
Register download is executed only
during the power-on phase or after
a reset, overwriting configuration
register settings on the internal
configuration register.
Register download is executed after a
WRITE VOLATILE or ENHANCED
VOLATILE CONFIGURATION REGISTER
command, overwriting configuration
register settings on the internal
configuration register.
Internal configuration
register
Device behavior
PDF: 09005aef846a804a
n25q_256mb_1_8V_65nm.pdf - Rev. G 2/2012 EN
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