N25Q256A11ESF40F Datasheet, PDF (60/87 Pages) Micron Technology – Micron Serial NOR Flash Memory

1.8V, 256Mb: Multiple I/O Serial Flash Memory
ERASE Operations
allowed during an ERASE SUSPEND state. When the ERASE operation resumes, it does
not check the new lock status of the WRITE LOCK REGISTER command.
During a PROGRAM SUSPEND operation, a READ operation is possible in any page ex-
cept the one in a suspended state. Reading from a page that is in a suspended state will
output indeterminate data. The commands allowed during a program suspend state in-
clude the WRITE VOLATILE CONFIGURATION REGISTER command and the WRITE
ENHANCED VOLATILE CONFIGURATION REGISTER command.
It is possible to nest a PROGRAM/ERASE SUSPEND operation inside a PROGRAM/
ERASE SUSPEND operation just once. Issue an ERASE command and suspend it. Then
issue a PROGRAM command and suspend it also. With the two operations suspended,
the next PROGRAM/ERASE RESUME command resumes the latter operation, and a sec-
ond PROGRAM/ERASE RESUME command resumes the former (or first) operation.
Table 26: Suspend Parameters
Parameter
Erase to suspend
Program to suspend
Subsector erase to sus-
pend
Suspend latency
Suspend latency
Suspend latency
Condition
Sector erase or erase resume to erase suspend
Program resume to program suspend
Subsector erase or subsector erase resume to erase sus-
pend
Program
Subsector erase
Erase
Typ Max Units Notes
700
–
µs
1
5
–
µs
1
50
–
µs
1
7
–
µs
2
15
–
µs
2
15
–
µs
3
Notes:
1. Timing is not internally controlled.
2. Any READ command accepted.
3. Any command except the following are accepted: SECTOR, SUBSECTOR, or BULK ERASE;
WRITE STATUS REGISTER; WRITE NONVOLATILE CONFIGURATION REGISTER; and PRO-
GRAM OTP.
PDF: 09005aef846a804a
n25q_256mb_1_8V_65nm.pdf - Rev. G 2/2012 EN
60
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.