MT41J128M16HA-15ED Datasheet, PDF (79/211 Pages) Micron Technology – DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks

Table 56: Electrical Characteristics and AC Operating Conditions (Continued)
Notes 1–8 apply to the entire table
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Parameter
Symbol Min Max Min Max Min Max Min Max
READ-to-PRECHARGE time
t_RTP
MIN = greater of 4CK or 7.5ns; MAX = n/a
CAS#-to-CAS# command delay
t_CCD
MIN = 4CK; MAX = n/a
Auto precharge write recovery + precharge
time
t_DAL
MIN = WR + ^tRP/^tCK (AVG); MAX = n/a
MODE REGISTER SET command cycle time
t_MRD
MIN = 4CK; MAX = n/a
MODE REGISTER SET command update delay ^tMOD
MIN = greater of 12CK or 15ns; MAX = n/a
MULTIPURPOSE REGISTER READ burst end to
mode register set for multipurpose register
exit
t_MPRR
MIN = 1CK; MAX = n/a
Calibration Timing
ZQCL command: Long POWER-UP and RE- ^tZQinit
512
–
512
–
512
–
512
–
calibration time
SET operation
Normal operation ^tZQoper 256
–
256
–
256
–
256
–
ZQCS command: Short calibration time
t_ZQCS
64
–
64
–
64
–
64
–
Initialization and Reset Timing
Exit reset from CKE HIGH to a valid command ^tXPR
MIN = greater of 5CK or ^tRFC + 10ns; MAX = n/a
Begin power supply ramp to power supplies
stable
t_VDDPR
MIN = n/a; MAX = 200
RESET# LOW to power supplies stable
RESET# LOW to I/O and R_TT High-Z
t_RPS
t_IOZ
MIN = 0; MAX = 200
MIN = n/a; MAX = 20
Refresh Timing
REFRESH-to-ACTIVATE or REFRESH
command period
t_{RFC – 1Gb}
t_{RFC – 2Gb}
MIN = 110; MAX = 70,200
MIN = 160; MAX = 70,200
t_{RFC – 4Gb}
MIN = 260; MAX = 70,200
t_{RFC – 8Gb}
MIN = 350; MAX = 70,200
Maximum refresh
period
Maximum average
periodic refresh
T_C ≤ 85°C
T_C > 85°C
T_C ≤ 85°C
T_C > 85°C
–
t_REFI
Self Refresh Timing
64 (1X)
32 (2X)
7.8 (64ms/8192)
3.9 (32ms/8192)
Unit
CK
CK
CK
Notes
31, 32
CK
CK
CK
CK
CK
CK
CK
ms
ms
ns
35
ns
ns
ns
ns
ms
36
ms
36
μs
36
μs
36