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MT41J64M16JT-125G Datasheet, PDF (66/214 Pages) Micron Technology – DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks
1Gb: x4, x8, x16 DDR3 SDRAM
Output Driver Impedance
Table 41: 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = 1.425V
MR1[5,1]
0, 1
RON
Ω
Resistor
RON34(PD)
RON34(PU)
VOUT
IOL @ 0.2 × VDDQ
IOL @ 0.5 × VDDQ
IOL @ 0.8 × VDDQ
IOH @ 0.2 × VDDQ
IOH @ 0.5 × VDDQ
IOH @ 0.8 × VDDQ
Max
14.0
23.3
37.3
37.3
23.3
14.0
Nom
8.3
20.8
33.3
33.3
20.8
8.3
Min
7.5
18.7
23.5
23.5
18.7
7.5
Unit
mA
mA
mA
mA
mA
mA
34 Ohm Output Driver Sensitivity
If either the temperature or the voltage changes after ZQ calibration, then the tolerance
limits listed in Table 37 (page 64) can be expected to widen according to Table 42 and
Table 43 (page 66).
Table 42: 34 Ohm Output Driver Sensitivity Definition
Symbol
Min
RON(PD) @ 0.2 × VDDQ
RON(PD) @ 0.5 × VDDQ
RON(PD) @ 0.8 × VDDQ
RON(PU) @ 0.2 × VDDQ
RON(PU) @ 0.5 × VDDQ
RON(PU) @ 0.8 × VDDQ
0.6 - dRONdTL × |ΔT| - dRONdVL × |ΔV|
0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV|
0.9 - dRONdTH × |ΔT| - dRONdVH × |ΔV|
0.9 - dRONdTL × |ΔT| - dRONdVL × |ΔV|
0.9 - dRONdTM × |ΔT| - dRONdVM × |ΔV|
0.6 - dRONdTH × |ΔT| - dRONdVH × |ΔV|
Max
1.1 + dRONdTL × |ΔT| + dRONdVL × |ΔV|
1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV|
1.4 + dRONdTH × |ΔT| + dRONdVH × |ΔV|
1.4 + dRONdTL × |ΔT| + dRONdVL × |ΔV|
1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV|
1.1 + dRONdTH × |ΔT| + dRONdVH × |ΔV|
Note: 1. ΔT = T - T(@CALIBRATION)ΔV = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ.
Unit
RZQ/7
RZQ/7
RZQ/7
RZQ/7
RZQ/7
RZQ/7
Table 43: 34 Ohm Output Driver Voltage and Temperature Sensitivity
Change
dRONdTM
dRONdVM
dRONdTL
dRONdVL
dRONdTH
dRONdVH
Min
0
0
0
0
0
0
Max
1.5
0.13
1.5
0.13
1.5
0.13
Unit
%/°C
%/mV
%/°C
%/mV
%/°C
%/mV
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
66
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