MT41J64M16JT-125G Datasheet, PDF (1/214 Pages) Micron Technology – DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks

1Gb: x4, x8, x16 DDR3 SDRAM
Features
DDR3 SDRAM
MT41J256M4 – 32 Meg x 4 x 8 banks
MT41J128M8 – 16 Meg x 8 x 8 banks
MT41J64M16 – 8 Meg x 16 x 8 banks
Features
• V_DD = V_DDQ = 1.5V ±0.075V
• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS READ latency (CL)
• POSTED CAS ADDITIVE latency (AL)
• Programmable CAS WRITE latency (CWL) based on
t_CK
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• T_C of 0°C to 95°C
– 64ms, 8192 cycle refresh at 0°C to 85°C
– 32ms, 8192 cycle refresh at 85°C to 95°C
• Self refresh temperature (SRT)
• Automatic self refresh (ASR)
• Write leveling
• Multipurpose register
• Output driver calibration
Options¹
• Configuration
– 256 Meg x 4
– 128 Meg x 8
– 64 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (8mm x 11.5mm) Rev. G
• FBGA package (Pb-free) – x16
– 96-ball (8mm x 14mm) Rev. G
• Timing – cycle time
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.07ns @ CL = 12 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
• Operating temperature
– Commercial (0°C ≤ T_C ≤ +95°C)
– Industrial (–40°C ≤ T_C ≤ +95°C)
– Automotive (–40°C ≤ T_C ≤ +105°C)
• Revision
Marking
256M4
128M8
64M16
JP
JT
-107
-107E
-125
-15E
-187E
None
IT
AT
G
Note:
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on http://www.micron.com
for available offerings.
Table 1: Key Timing Parameters
Speed Grade
-107^{1, 2}
-107E^{1, 2}
-125^{1, 2}
-15E¹
187E
Data Rate (MT/s)
1866
1866
1600
1333
1066
Target ^tRCD-^tRP-CL
13-13-13
12-12-12
11-11-11
9-9-9
7-7-7
Notes: 1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
t_{RCD (ns)}
13.91
12.84
13.75
13.5
13.1
t_{RP (ns)}
13.91
12.84
13.75
13.5
13.1
CL (ns)
13.91
12.84
13.75
13.5
13.1
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
1
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Products and specifications discussed herein are subject to change by Micron without notice.