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MT41J64M16JT-125G Datasheet, PDF (58/214 Pages) Micron Technology – DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks
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1Gb: x4, x8, x16 DDR3 SDRAM
ODT Characteristics
ODT Resistors
Table 32 (page 58) provides an overview of the ODT DC electrical characteristics. The
values provided are not specification requirements; however, they can be used as design
guidelines to indicate what RTT is targeted to provide:
• RTT Ω is made up of RTT120(PD240) and RTT120(PU240)
• RTT Ω is made up of RTT60(PD120) and RTT60(PU120)
• RTT Ω is made up of RTT40(PD80) and RTT40(PU80)
• RTT Ω is made up of RTT30(PD60) and RTT30(PU60)
• RTT Ω is made up of RTT20(PD40) and RTT20(PU40)
Table 32: RTT Effective Impedances
MR1
[9, 6, 2]
0, 1, 0
RTT
Ω
Resistor
RTT120(PD240)
RTT120(PU240)
0, 0, 1
Ω
Ω
RTT60(PD120)
RTT60(PU120)
0, 1, 1
Ω
Ω
RTT40(PD80)
RTT40(PU80)
1, 0, 1
Ω
Ω
RTT30(PD60)
RTT30(PU60)
Ω
VOUT
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
VIL(AC) to VIH(AC)
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
VIL(AC) to VIH(AC)
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
VIL(AC) to VIH(AC)
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
0.2 × VDDQ
0.5 × VDDQ
0.8 × VDDQ
VIL(AC) to VIH(AC)
Min
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
Nom
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Max
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
Unit
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/1
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/2
RZQ/4
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/3
RZQ/6
RZQ/4
RZQ/4
RZQ/4
RZQ/4
RZQ/4
RZQ/4
RZQ/8
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
58
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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