 English |
|
|
|
|
|
|
|
| MT41J64M16JT-125G Datasheet, PDF (49/214 Pages) Micron Technology – DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks | |||
| |||
| ◁ |
Figure 15: Input Signal
0.925V
Minimum VIL and VIH levels
VIH(AC)
0.850V
0.780V
0.765V
0.750V
0.735V
0.720V
0.650V
VIH(DC)
VIL(DC)
1.90V
1.50V
0.925V
0.850V
0.780V
0.765V
0.750V
0.735V
0.720V
0.650V
1Gb: x4, x8, x16 DDR3 SDRAM
Electrical Specifications â DC and AC
VIL and VIH levels with ringback
VDDQ + 0.4V narrow
pulse width
VDDQ
VIH(AC)
VIH(DC)
VVRREEFF
+
+
AC
DC
noise
error
VREF - DC error
VREF - AC noise
VIL(DC)
0.575V
VIL(AC)
0.575V
0.0V
â0.40V
Note: 1. Numbers in diagrams reflect nominal values.
VIL(AC)
VSS
VSS - 0.4V narrow
pulse width
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN
49
Micron Technology, Inc. reserves the right to change products or specifications without notice.
 2006 Micron Technology, Inc. All rights reserved.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese