MT40A512M8RH-075EAUT Datasheet, PDF (265/359 Pages) Micron Technology – Automotive DDR4 SDRAM

4Gb: x8, x16 Automotive DDR4 SDRAM
Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Figure 206: DQ Slew Rate Definitions
t_r2
Rx Mask
t_r1
t_f1
Rx Mask
0.5 × V_diVW,max
V_{CENTDQ,midpoint}
0.5 × V_diVW,max
0.5 × V_diVW,max
V_{CENTDQ,midpoint}
0.5 × V_diVW,max
t_f2
Notes:
1. Rising edge slew rate equation srr1 = V_diVW,max/(^tr1).
2. Rising edge slew rate equation srr2 = (V_IHL(AC)min - V_diVW,max )/(2 × ^tr2).
3. Falling edge slew rate equation srf1 = V_diVW,max/(^tf1).
4. Falling edge slew rate equation srf2 = (V_IHL(AC)min - V_diVW,max )/(2 × ^tf2).
Table 91: DQ Input Receiver Specifications
Note 1 applies to the entire table
DDR4-1600,
1866, 2133
Parameter
Symbol Min Max
V_IN Rx mask input V_diVW
–
136
peak-to-peak
DQ Rx input tim- TdiVW –
0.2
ing window
DQ AC input
V_IHL(AC) 186
–
swing peak-to-
peak
DDR4-2400
Min Max
–
130
–
0.2
160
–
DDR4-2666
Min Max
–
120
– 0.22
150
–
DDR4-2933
Min Max
–
115
– 0.23
145
–
DDR4-3200
Min Max
–
110
Not
Unit es
mV 2, 3
– 0.23 UI 2, 3
140
– mV 4, 5
CCMTD-1725822587-10418
4gb_auto_ddr4_sdram_z90b.pdf - Rev. D 01/17 EN
265
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