MT9VDDT3272AG Datasheet, PDF (17/27 Pages) Micron Technology – DDR SDRAM UNBUFFERED DIMM

128MB, 256MB, 512MB (x72, ECC, SR), PC3200
184-Pin DDR SDRAM UDIMM
Table 16: DDR SDRAM Component Electrical Characteristics and
Recommended AC Operating Conditions (Continued)
Notes: 1–5, 8, 12–15, 29, 31; notes appear on page 18–20; 0°C ≤ T_A ≤ +70°C; VDD = VDDQ = +2.6V ±0.1V
AC CHARACTERISTICS
PARAMETER
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval 128MB
256MB, 512MB
Average periodic refresh interval
128MB
256MB, 512MB
Terminating voltage delay to VDD
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
SYMBOL
t_RCD
t_RP
t_RPRE
t_RPST
t_RRD
t_WPRE
t_WPRES
t_WPST
t_WR
t_WTR
na
t_REFC
t_REFI
t_VTD
t_XSNR
t_XSRD
-40B
MIN
15
15
0.9
MAX
1.1
0.4
0.6
10
0.25
0
0.4
0.6
15
2
t_{QH -}t_DQSQ
140.6
70.3
15.6
7.8
0
75
200
UNITS
ns
ns
t_CK
t_CK
ns
t_CK
ns
t_CK
ns
t_CK
ns
µs
µs
µs
µs
ns
ns
t_CK
NOTES
38
18, 19
17
22
21
21
pdf: 09005aef80a43e7d, source: 09005aef80a43d77
DDA9C16_32_64x72AG.fm - Rev. B 9/04 EN
17
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©2004 Micron Technology, Inc.