MT41J128M16JT-125K Datasheet, PDF (128/211 Pages) Micron Technology – DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks

2Gb: x4, x8, x16 DDR3 SDRAM
Write Leveling
Write Leveling Procedure
A memory controller initiates the DRAM write leveling mode by setting MR1[7] to 1, as-
suming the other programable features (MR0, MR1, MR2, and MR3) are first set and the
DLL is fully reset and locked. The DQ balls enter the write leveling mode going from a
High-Z state to an undefined driving state, so the DQ bus should not be driven. During
write leveling mode, only the NOP or DES commands are allowed. The memory con-
troller should attempt to level only one rank at a time; thus, the outputs of other ranks
should be disabled by setting MR1[12] to 1 in the other ranks. The memory controller
may assert ODT after a ^tMOD delay, as the DRAM will be ready to process the ODT tran-
sition. ODT should be turned on prior to DQS being driven LOW by at least ODTLon
delay (WL - 2 ^tCK), provided it does not violate the aforementioned ^tMOD delay require-
ment.
The memory controller may drive DQS LOW and DQS# HIGH after ^tWLDQSEN has
been satisfied. The controller may begin to toggle DQS after ^tWLMRD (one DQS toggle
is DQS transitioning from a LOW state to a HIGH state with DQS# transitioning from a
HIGH state to a LOW state, then both transition back to their original states). At a mini-
mum, ODTLon and ^tAON must be satisfied at least one clock prior to DQS toggling.
After ^tWLMRD and a DQS LOW preamble (^tWPRE) have been satisfied, the memory
controller may provide either a single DQS toggle or multiple DQS toggles to sample CK
for a given DQS-to-CK skew. Each DQS toggle must not violate ^tDQSL (MIN) and ^tDQSH
(MIN) specifications. ^tDQSL (MAX) and ^tDQSH (MAX) specifications are not applicable
during write leveling mode. The DQS must be able to distinguish the CK’s rising edge
within ^tWLS and ^tWLH. The prime DQ will output the CK’s status asynchronously from
the associated DQS rising edge CK capture within ^tWLO. The remaining DQ that always
drive LOW when DQS is toggling must be LOW within ^tWLOE after the first ^tWLO is sat-
isfied (the prime DQ going LOW). As previously noted, DQS is an input and not an out-
put during this process. Figure 46 (page 129) depicts the basic timing parameters for
the overall write leveling procedure.
The memory controller will most likely sample each applicable prime DQ state and de-
termine whether to increment or decrement its DQS delay setting. After the memory
controller performs enough DQS toggles to detect the CK’s 0-to-1 transition, the memo-
ry controller should lock the DQS delay setting for that DRAM. After locking the DQS
setting is locked, leveling for the rank will have been achieved, and the write leveling
mode for the rank should be disabled or reprogrammed (if write leveling of another
rank follows).
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf - Rev. Q 04/13 EN
128
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