PIC16F526 Datasheet, PDF (86/122 Pages) Microchip Technology – 14-Pin, 8-Bit Flash Microcontroller

PIC16F526
14.2 DC Characteristics: PIC16F526 (Extended)
DC Characteristics
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40C  TA  +125C (extended)
Param
No.
Sym.
Characteristic
Min. Typ.⁽¹⁾ Max. Units
Conditions
D001 VDD Supply Voltage
2.0
5.5
D002 VDR RAM Data Retention Voltage⁽²⁾ — 1.5* —
V See Figure 14-1
V Device in Sleep mode
D003 VPOR VDD Start Voltage to ensure
Power-on Reset
— Vss —
V See Section 8.4 “Power-on
Reset (POR)” for details
D004 SVDD VDD Rise Rate to ensure
Power-on Reset
0.05* —
— V/ms See Section 8.4 “Power-on
Reset (POR)” for details
D005 IDDP
D010 IDD
Supply Current During Prog/
Erase
Supply Current^(3,4,6)
— 250* — A
— 175 250 A FOSC = 4 MHz, VDD = 2.0V
— 400 700 A FOSC = 4 MHz, VDD = 5.0V
— 250 400 A FOSC = 8 MHz, VDD = 2.0V
— 0.75 1.2 mA FOSC = 8 MHz, VDD = 5.0V
— 1.4 2.2 mA FOSC = 20 MHz, VDD = 5.0V
D020 IPD
Power-down Current⁽⁵⁾
D022 IWDT WDT Current⁽⁵⁾
D023 ICMP Comparator Current⁽⁵⁾
D022 IcVREF CvREF Current⁽⁵⁾
—
11 26 A FOSC = 32 kHz, VDD = 2.0V
—
38 110 A FOSC = 32 kHz, VDD = 5.0V
— 0.1 9.0 A VDD = 2.0V
— 0.35 15.0 A VDD = 5.0V
— 1.0 18 A VDD = 2.0V
— 7.0 22 A VDD = 5.0V
— 15 26 A VDD = 2.0V (per comparator)
— 60 76 A VDD = 5.0V (per comparator)
— 30 75 A VDD = 2.0V (high range)
— 75 135 A VDD = 5.0V (high range)
D023 IFVR
Internal 0.6V Fixed Voltage
Reference Current⁽⁵⁾
— 100 130 A VDD = 2.0V (reference and 1
comparator enabled)
— 175 220 A VDD = 5.0V (reference and 1
comparator enabled)
D024 IAD* A/D Conversion Current
— 120 150 A 2.0V
— 200 250 A 5.0V
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25C. This data is for design
guidance only and is not tested.
2: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
4: The test conditions for all IDD measurements in Active Operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VSS, T0CKI = VDD, MCLR =
VDD; WDT enabled/disabled as specified.
5: For standby current measurements, the conditions are the same as IDD, except that the device is in Sleep
mode. If a module current is listed, the current is for that specific module enabled and the device in Sleep.
6: For EXTRC mode, does not include current through REXT. The current through the resistor can be estimated
by the formula:
I = VDD/2REXT (mA) with REXT in k.
DS41326D-page 86
 2010 Microchip Technology Inc.