PIC16F636T-I Datasheet, PDF (172/234 Pages) Microchip Technology – 8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology

PIC12F635/PIC16F636/639
15.3 DC Characteristics: PIC12F635/PIC16F636-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +125°C for extended
Param
No.
Sym
Device Characteristics
Min Typ† Max Units
VDD
Conditions
Note
D020 IPD
Power-down Base
Current⁽⁴⁾
— 0.15 1.2
μA
— 0.20 1.5
μA
2.0 WDT, BOR, Comparators,
3.0 ^{VREF and T1OSC disabled}
D021
— 0.35 1.8
μA
—
1.0 17.5 μA
5.0
2.0 WDT Current⁽¹⁾
—
2.0
19
μA
3.0
D022A
—
3.0
22
μA
—
42
60
μA
5.0
3.0 BOR Current⁽¹⁾
—
85 122 μA
5.0
D022B
—
22
48
μA
2.0 PLVD Current
—
25
55
μA
3.0
D023
—
33
65
μA
— 32.3 45
μA
5.0
2.0 Comparator Current⁽¹⁾
—
60
78
μA
3.0
D024A
— 120 160 μA
—
30
36
μA
—
45
55
μA
5.0
2.0 CVREF Current⁽¹⁾
3.0 ^(high-range)
D024B
—
75
95
μA
—
39
47
μA
—
59
72
μA
5.0
2.0 CVREF Current⁽¹⁾
3.0 ^(low-range)
D025
—
98 124 μA
—
4.5
25
μA
5.0
2.0 T1OSC Current⁽³⁾
—
5.0
30
μA
3.0
—
6.0
40
μA
5.0
†
Note 1:
2:
3:
4:
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square wave, from
rail-to-rail; all I/O pins tri-stated, pulled to VDD; MCLR = VDD; WDT disabled.
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact
on the current consumption.
The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this periph-
eral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this
limit. Max values should be used when calculating total current consumption.
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
DS41232D-page 170
© 2007 Microchip Technology Inc.