MAX14001 Datasheet, PDF (32/34 Pages) Maxim Integrated Products – Configurable, Isolated 10-bit ADCs for Multi-Range Binary Inputs

MAX14001/MAX14002
Configurable, Isolated 10-bit ADCs for
Multi-Range Binary Inputs
High-Voltage FET
The MAX14001/MAX14002 are designed to use a low
cost, readily available high-voltage depletion mode FET
as the external high-voltage power device. The high voltage
binary input is connected to the FET’s drain while the
gate and source are at low voltages compatible with the
MAX14001/MAX14002. The FET is driven in a cascade
fashion with its gate held at a constant voltage by the
GATE pin. The IFET pin sinks the specified inrush or
bias current from the FET’s source and in the process
modulates the FET’s source voltage. Refer to the Typical
Application Circuit for a connection example.
The MAX14001/MAX14002 need at least 1V on the IFET
pin under worst-case conditions. With a typical voltage of
3.6V, the GATE pin provides a maximum V_GS of 2.6V to
the FET. The required maximum FET on resistance R_ON
can be calculated as:
R_ON ≤ (V_DRAIN - V_IFET)/I_INRUSH
Where I_INRUSH can be configured to 105mA maximum
and V_IFET = 1V. For example, if the FET V_DRAIN = 24V,
the maximum R_ON is calculated to be 219Ω at V_GS = 2.6V.
When selecting the FET, temperature tolerance should
also be taken into consideration.
For applications where the peak input voltage does not
exceed 600V, it is recommended to use the following devices:
●● Infineon BSP135
●● IXYS IXTY08N100D2
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