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LTC3838-1_15 Datasheet, PDF (39/52 Pages) Linear Technology – Dual, Fast, Accurate Step-Down DC/DC Controller with Dual Differential Output Sensing
LTC3838-1
APPLICATIONS INFORMATION
Remember to check the maximum possible peak inductor
current, considering the upper spec limit of VSENSE(MAX)
and the DCR(MIN) at lowest operating temperature, as well
as the maximum ∆IL, is not going to saturate the inductor
or exceed the rating of power MOSFETs:
IL(PEAK )
=
VSENSE(MAX)(Upper SpecLimit)
DCRMIN 1+ (TMIN – 25°C) • 0.4% /
°C
+
∆IL(MAX )
For the external N-channel MOSFETs, Renesas
RJK0305DBP (RDS(ON) = 13mΩ max, CMILLER =
150pF, VGS = 4.5V, θJA = 40°C/W, TJ(MAX) = 150°C)
is chosen for the top MOSFET (main switch). RJK-
0330DBP (RDS(ON) = 3.9mΩ max, VGS = 4.5V, θJA =
40°C/W, TJ(MAX) = 150°C) is chosen for the bottom
MOSFET (synchronous switch). The power dissipation
for each MOSFET can be calculated for VIN = 24V and
typical TJ = 125°C:
PTOP
=
 1.2V
 24V


(15A)2
(13mΩ)1+
0.4%(125°C
–
25°C)
+
(24V)2


15A
2


(150pF)
2.5Ω
5.3V – 3V
+
1.2Ω
3V
(350kHz)
= 0.54W
PBOT
=


24V – 1.2V
24V
(15A)2
(3.9mΩ)1+
0.4%(125°C
–
25°C)
= 1.2W
The resulted junction temperatures at an ambient tem-
perature TA = 75°C are:
TJ(TOP) = 75°C + (0.54W)(40°C/W) = 97°C
TJ(BOT) = 75°C + (1.2W)(40°C/W) = 123°C
These numbers show that careful attention should be paid
to proper heat sinking when operating at higher ambient
temperatures.
Select the CIN capacitors to give ample capacitance and
RMS ripple current rating. Consider worst-case duty
cycles per Figure 6: If operated at steady-state with SW
nodes fully interleaved, the two channels would gener-
ate not more than 7.5A RMS at full load. In this design
example, 3 × 10µF 35V X5R ceramic capacitors are put
in parallel to take the RMS ripple current, with a 220µF
aluminum-electrolytic bulk capacitor for stability. For
10µF 1210 X5R ceramic capacitors, try to keep the ripple
current less than 3A RMS through each device. The bulk
capacitor is chosen for RMS rating per simulation with
the circuit model provided.
The output capacitor COUT is chosen for a low ESR of
4.5mΩ to minimize output voltage changes due to inductor
ripple current and load steps. The output voltage ripple
is given as:
∆VOUT(RIPPLE) = ∆IL(MAX) • ESR = 5.85A • 4.5mΩ = 26mV
However, a 10A load step will cause an output change
of up to:
∆VOUT(STEP) = ∆ILOAD • ESR = 10A • 4.5mΩ = 45mV
Optional 2 × 100µF ceramic output capacitors are included
to minimize the effect of ESR and ESL in the output ripple
and to improve load step response.
The ITH compensation resistor RITH of 40k and a CITH of
220pF are chosen empirically for fast transient response,
and an additional CITH2 = 22pF is added directly from ITH pin
to SGND, to roll off the system gain at switching frequency
and attenuate high frequency noise. For less aggressive
transient response but more stability, lower-valued RITH
and higher-valued CITH and CITH2 can be used (such as
the various combinations used in Figures 16, 17, 18, 19,
20), which typically results in lower bandwidth but more
phase margin.
To set up the detect transient (DTR) feature, pick resis-
tors for an equivalent RITH = RITH1//RITH2 close to the
40k chosen. Here, 1% resistors RITH1 = 90.9k (low side)
and RITH2 = 82.5k (high side) are used, which yields an
equivalent RITH of 43.2k, and a DC-bias threshold of 236mV
typical above one-half of INTVCC (including the 2.5µA
pull-up current from the DTR pin, see the Load-Release
Transient Detection section). Note that even though the
accuracy of the equivalent compensation resistance RITH
is not as important, always use 1% or better resistors for
the resistor divider from INTVCC to SGND to guarantee the
relative accuracy of this DC-bias threshold. To disable the
DTR feature, simply use a single RITH resistor to SGND,
and tie the DTR pin to INTVCC.
For more information www.linear.com3838-1
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