IS66WVC1M16ALL Datasheet, PDF (29/67 Pages) Integrated Silicon Solution, Inc – Mixed Mode supports asynchronous write and synchronous read operation

IS66WVC1M16ALL
IS67WVC1M16ALL
Electrical Characteristics
Table 11. Absolute Maximum Ratings
Parameter
Voltage to Any Ball Except VDD, VDDQ Relative to VSS
Voltage on VDD Supply Relative to VSS
Voltage on VDDQ Supply Relative to VSS
Storage Temperature (plastic)
Operating Temperature (case)
Soldering Temperature and Time
10s (solder ball only)
Rating
-0.3V to VDDQ + 0.3V
-0.2V to +2.45V
-0.2V to +2.45V
-55°C to +150°C
-40°C to +85°C
+260°C
Notes:
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other
conditions above those indicated in this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Table 12. Electrical Characteristics and Operating Conditions
Industrial Temperature (–40ºC < TC < +85ºC)
Description
Conditions
Symbol
MIN
Supply Voltage
VDD
1.7
I/O Supply Voltage
VDDQ
1.7
Input High Voltage
VIH
VDDQ-0.4
Input Low Voltage
VIL
-0.20
Output High Voltage
IOH = -0.2mA
VOH
0.80 VDDQ
Output Low Voltage
IOL = +0.2mA
VOL
Input Leakage Current
VIN = 0 to VDDQ
ILI
Output Leakage Current
OE#=VIH or
Chip Disabled
ILO
Operating Current
Conditions
Symbol
TYP
Asynchronous Random
READ/WRITE
IDD1
-70
Asynchronous
PAGE READ
IDD1P
-70
Initial Access, Burst
READ/WRITE
VIN = VDDQ or 0V
Chip enabled,
IOUT = 0
IDD2
133Mhz
104Mhz
80Mhz
133Mhz
Continuous Burst READ
IDD3R 104Mhz
80Mhz
133Mhz
Continuous Burst WRITE
IDD3W 104Mhz
80Mhz
Standby Current
VIN=VDDQ or 0V
CE#=VDDQ
ISB
MAX
1.95
1.95
VDDQ+0.2
0.4
0.20 VDDQ
1
Unit
V
V
V
V
V
V
uA
1
uA
MAX
Unit
25
mA
18
mA
45
35
mA
30
40
30
mA
25
40
35
mA
30
80
uA
Note
1
2
3
3
Note
4
4
4
4
4
5
Rev.A | October 2013
www.issi.com – [e-mail]
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