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IS66WVC1M16ALL Datasheet, PDF (27/67 Pages) Integrated Silicon Solution, Inc – Mixed Mode supports asynchronous write and synchronous read operation
IS66WVC1M16ALL
IS67WVC1M16ALL
Refresh Configuration Register
The refresh configuration register (RCR) defines how the CellularRAM device performs
its transparent self refresh. Altering the refresh parameters can dramatically reduce
current consumption during standby mode. Table 8 describes the control bits used in
the RCR. At power-up, the RCR is set to 0010h
The RCR is accessed using CRE and A[19:18] = 00b, or through the configuration
register software access sequence with DQ = 0000h on the third cycle (see “Registers”)
Table 8. Refresh Configuration Register
Bit Number
19 – 18
17 – 8
7
6–5
4
3
2–0
Definition
Register Select
Reserved
Page
Reserved
DPD
Reserved
Partial Refresh
Remark
00 = Select RCR
01 = Select DIDR
10 = Select BCR
Must be set to “0”
0 = Page Mode disabled (default)
1 = Page Mode enable
Setting is ignored (Default 00b)
0 = DPD enable
1 = DPD disable (default)
Must be set to “0”
000 = Full array (default)
001 = Bottom 1/2 array
010 = Bottom 1/4 array
011 = Bottom 1/8 array
100 = None of array
101 = Top 1/2 array
110 = Top 1/4 array
111 = Top 1/8 array
Rev.A | October 2013
www.issi.com – SRAM@issi.com
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