80C86_06 Datasheet, PDF (16/37 Pages) Intersil Corporation – CMOS 16-Bit Microprocessor

80C86
DC Electrical Specifications
V_CC = 5.0V, ±10%; T_A = 0^oC to +70^oC (C80C86, C80C86-2)
V_CC = 5.0V, ±10%; T_A = -40^oC to +85^oC (l80C86, I80C86-2)
V_CC = 5.0V, ±10%; T_A = -55^oC to +125^oC (M80C86)
V_CC = 5.0V, ±5%; T_A = -55^oC to +125^oC (M80C86-2)
SYMBOL
V_IL
V_IHC
V_ILC
V_OH
PARAMETER
Logical Zero Input Voltage
CLK Logical One Input Voltage
CLK Logical Zero Input Voltage
Output High Voltage
V_OL
Output Low Voltage
I_I
Input Leakage Current
l_BHH
l_BHL
I_O
I_CCSB
I_CCOP
Input Current-Bus Hold High
Input Current-Bus Hold Low
Output Leakage Current
Standby Power Supply Current
Operating Power Supply Current
MIN
V_CC -0.8
3.0
V_CC -0.4
-1.0
-40
40
-
-
-
MAX
0.8
0.8
0.4
1.0
-400
400
-10.0
500
10
UNITS
V
V
V
V
V
V
μA
μA
μA
μA
μA
mA/MHz
TEST CONDITION
l_OH = -2.5mA
l_OH = -100μA
l_OL = +2.5mA
V_IN = GND or V_CC DIP
Pins 17-19, 21-23, 33
V_IN = - 3.0V (Note 1)
V_IN = - 0.8V (Note 2)
V_OUT = GND (Note 4)
V_CC = - 5.5V (Note 3)
FREQ = Max, V_IN = V_CC or GND,
Outputs Open
Capacitance T_A = 25^oC
SYMBOL
PARAMETER
TYPICAL UNITS
TEST CONDITIONS
C_IN
Input Capacitance
25
pF
FREQ = 1MHz. All measurements are referenced to device GND
C_OUT Output Capacitance
25
pF
FREQ = 1MHz. All measurements are referenced to device GND
C_I/O
I/O Capacitance
25
pF
FREQ = 1MHz. All measurements are referenced to device GND
NOTES:
2. lBHH should be measured after raising V_IN to V_CC and then lowering to 3.0V on the following pins 2-16, 26-32, 34-39.
3. IBHL should be measured after lowering V_IN to GND and then raising to 0.8V on the following pins: 2-16, 34-39.
4. lCCSB tested during clock high time after halt instruction executed. V_IN = V_CC or GND, V_CC = 5.5V, Outputs unloaded.
5. IO should be measured by putting the pin in a high impedance state and then driving V_OUT to GND on the following pins: 26-29 and 32.
6. MN/MX is a strap option and should be held to V_CC or GND.
AC Electrical Specifications
MINIMUM COMPLEXITY SYSTEM
V_CC = 5.0V ±10%; T_A = 0^oC to +70^oC (C80C86, C80C86-2)
V_CC = 5.0V ±100%; T_A = -40^oC to +85^oC (I80C86, I80C86-2)
V_CC = 5.0V ±100%; T_A = -55^oC to +125^oC (M80C86)
V_CC = 5.0V ±5%; T_A = -55^oC to +125^oC (M80C86-2)
SYMBOL
PARAMETER
80C86
MIN
MAX
80C86-2
MIN
MAX UNITS
TEST
CONDITIONS
TIMING REQUIREMENTS
(1) TCLCL Cycle Period
200
125
ns
(2) TCLCH CLK Low Time
118
68
ns
(3) TCHCL CLK High Time
69
44
ns
(4) TCH1CH2 CLK Rise Time
10
10
ns From 1.0V to 3.5V
(5) TCL2C1 CLK FaIl Time
10
10
ns From 3.5V to 1.0V
156