SPP04N60C3 Datasheet, PDF (9/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
17 Typ. drain source voltage slope
dv/dt = f(R_G), inductive load, T_j = 125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=4.5A
100
V/ns
80
70
60
dv/dt(on)
50
40
30
20
dv/dt(off)
10
0
0
30
60
90 120 _Ω
180
R_G
19 Typ. switching losses
E = f(R_G), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=4.5A
0.1
*) Eon includes SDP06S60
mWs _{diode commutation losses.}
18 Typ. switching losses
E = f (I_D), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, R_G=18Ω
0.014
*) Eon includes SDP06S60
mWs ^{diode commutation losses.}
0.01
0.008
0.006
0.004
Eoff
Eon*
0.002
0
0 0.5 1 1.5 2 2.5 3 3.5 _A 4.5
I_D
20 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
5
A
0.08
0.07
0.06
Eoff
0.05
0.04
0.03
Eon*
0.02
0.01
0
0 20 40 60 80 100 120 140 160 _Ω 200
R_G
Page 9
4
T_j(START)=25°C
3.5
3
2.5
2
T_j(START)=125°C
1.5
1
0.5
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
2003-10-02