SPP04N60C3 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS @ T_jmax 650
V
R_DS(on)
0.95 Ω
I_D
4.5 A
• Periodic avalanche rated
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
3
12
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP04N60C3
SPB04N60C3
SPA04N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4366
P-TO263-3-2 Q67040-S4407
P-TO220-3-31 Q67040-S4413
Marking
04N60C3
04N60C3
04N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=3.4, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=4.5A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
SPP_B _SPA
4.5
2.8
13.5
130
4.5¹⁾
2.8¹⁾
13.5
130
0.4
0.4
4.5
4.5
±20
±20
±30
±30
50
31
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-10-02