SPP04N60C3 Datasheet, PDF (5/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor

1 Power dissipation
P_tot = f (T_C)
Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
2 Power dissipation FullPAK
P_tot = f (T_C)
SPP04N60C3
55
W
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
T_C
3 Safe operating area
I_D = f ( V_DS )
parameter : D = 0 , T_C=25°C
10 ²
A
35
W
25
20
15
10
5
0
0 20 40 60 80 100 120 _°C 160
T_C
4 Safe operating area FullPAK
I_D = f (V_DS)
parameter: D = 0, T_C = 25°C
10 ²
A
10 ¹
10 ¹
10 ⁰
10 ^-1
10
-2
10
0
10 ⁰
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 ¹
10 ²
10 ^-1
V ^{10 3}
V_DS
Page 5
10
-2
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10ms
DC
10 ¹
10 ²
V ^{10 3}
V_DS
2003-10-02