SPP04N60C3 Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
V_DS = 480 V, I_D = 4.5 A, T_j = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ³⁾
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s ⁴⁾
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
R_thJC
R_{thJC_FP}
R_thJA
R_{thJA_FP}
R_thJA
T_sold
Values
Unit
min. typ. max.
-
-
2.5 K/W
-
-
4
-
-
62
-
-
80
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at T_j=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V_(BR)DSS V_GS=0V, I_D=0.25mA 600
-
Drain-Source avalanche
V_(BR)DS V_GS=0V, I_D=4.5A
- 700
breakdown voltage
-V
-
Gate threshold voltage
V_GS(th) I_D=200µA, V_GS=VDS 2.1
3
3.9
Zero gate voltage drain current I_DSS
V_DS=600V, V_GS=0V,
µA
T_j=25°C
-
0.5
1
T_j=150°C
-
-
50
Gate-source leakage current
I _GSS
Drain-source on-state resistance R_DS(on)
V_GS=30V, V_DS=0V
V_GS=10V, I_D=2.8A
T_j=25°C
T_j=150°C
-
- 100 nA
Ω
- 0.85 0.95
-
2.3
-
Gate input resistance
R_G
f=1MHz, open drain
-
0.95
-
Page 2
2003-10-02