SPP04N60C3 Datasheet, PDF (4/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
Electrical Characteristics
Parameter
Symbol Conditions
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
I_S
T_C=25°C
I_SM
V_SD
t_rr
Q_rr
I _rrm
di_rr/dt
V_GS=0V, I_F=I_S
V_R=480V, I_F=I_S ,
di_F/dt=100A/µs
T_j=25°C
Values
Unit
min. typ. max.
-
-
4.5 A
-
- 13.5
-
1 1.2 V
- 300 500 ns
-
2.6
- µC
-
18
-A
- 900 - A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
SPP_B
SPA
R_th1
R_th2
R_th3
R_th4
R_th5
R_th6
0.039
0.074
0.132
0.555
0.529
0.169
0.039
0.074
0.132
0.272
0.559
2.523
K/W
C_th1
C_th2
C_th3
C_th4
C_th5
C_th6
Value
Unit
SPP_B
SPA
0.00007347 0.00007347 Ws/K
0.0002831 0.0002831
0.0004062 0.0004062
0.001215 0.001215
0.00276 0.005633
0.029
0.412
P_tot (t)
T_j R _th1
C _{th 1}
C _{th 2}
R_th,n T_case ^{External Heatsink}
C _{th ,n}
T_amb
Page 4
2003-10-02