SPP04N60C3 Datasheet, PDF (7/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
9 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
10
4.5V
Ω
4V
5V
8
7
20V
8V
7V
6.5V
6V
6
5.5V
5
4
3
2
1
0 1 2 3 4 5 6 7_A 9
I_D
11 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
16
A
10 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 2.8 A, V_GS = 10 V
SPP04N60C3
5.5
Ω
4.5
4
3.5
3
2.5
2
1.5
98%
1
typ
0.5
0
-60 -20 20
60 100
12 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 4.5 A pulsed
SPP04N60C3
16
V
°C
180
T_j
25°C
12
10
8
150°C
12
10
0,2 V_{DS max}
0,8 V_{DS max}
8
6
6
4
4
2
2
0
0 2 4 6 8 10 12 14 16 _V 20
V_GS
Page 7
0
0
4
8 12 16 20 24 _nC 30
Q_Gate
2003-10-02