SPP04N60C3 Datasheet, PDF (10/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor

21 Avalanche energy
E_AS = f (T_j)
par.: I_D = 3.4 , V_DD = 50 V
160
mJ
Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
22 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP04N60C3
720
V
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
T_j
23 Avalanche power losses
P_AR = f (f )
parameter: E_AR=0.4mJ
200
W
680
660
640
620
600
580
560
540
-60 -20 20
60 100
24 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ⁴
pF
°C
180
T_j
150
125
100
75
50
25
0
10
4
10 ³
C_iss
10 ²
10 ¹
C_oss
C_rss
10 ⁵
Hz
10 ⁶
f
10 ⁰
0
100 200 300 400
V
600
V_DS
Page 10
2003-10-02