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SPP04N60C3 Datasheet, PDF (6/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor
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5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
10 -1
10 -1
D = 0.5
D = 0.5
D = 0.2
D = 0.2
D = 0.1
D = 0.1
D = 0.05
D = 0.05
10 -2
D = 0.02
D = 0.01
10 -2
D = 0.02
D = 0.01
single pulse
single pulse
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
s 10 -1
tp
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
16
A
20V
10V
7V
12
6.5V
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
8.5
A
20V
8V
7
7V
6V
6.5V
6
10
6V
5
5.5V
8
4
5.5V
6
3
5V
4
5V
2
4.5V
2
4.5V
4V
0
0
5
10
15
V
25
VDS
1
4V
0
0
5
10
15
V
25
VDS
Page 6
2003-10-02
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