SPP04N60C3 Datasheet, PDF (8/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
13 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP04N60C3}
A
14 Typ. switching time
t = f (I_D), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, R_G=18Ω
90
ns
70
10 ¹
60
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
50
td(off)
40
tf
td(on)
tr
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 _A 4.5
I_D
15 Typ. switching time
t = f (R_G), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=4.5 A
500
ns
400
16 Typ. drain current slope
di/dt = f(R_G), inductive load, T_j = 125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=4.5A
2400
A/µs
350
1600
300
250
td(off)
tf
200
td(on)
tr
150
100
50
0
0 20 40 60 80 100 120 140 160 _Ω 190
R_G
Page 8
1200
800
di/dt(on)
400
di/dt(off)
0
0 20 40 60 80 100 120 140 160 _Ω 200
R_G
2003-10-02