SPP04N60C3 Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP04N60C3, SPB04N60C3
SPA04N60C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
g_fs
Input capacitance
C_iss
Output capacitance
C_oss
Reverse transfer capacitance C_rss
Effective output capacitance,⁵⁾ C_o(er)
energy related
Effective output capacitance,⁶⁾ C_o(tr)
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
t_r
t_d(off)
t_f
V_DS≥2*I_D*R_DS(on)max,
I_D=2.8A
V_GS=0V, V_DS=25V,
f=1MHz
V_GS=0V,
V_DS=0V to 480V
V_DD=380V, V_GS=0/10V,
I_D=4.5A,
R_G=18Ω
Values
Unit
min. typ. max.
-
4.4
-S
- 490 - pF
- 160 -
-
15
-
-
20
-
-
35
-
-
6
- ns
-
2.5
-
- 58.5 80
-
9.5 14
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q_gs
Q_gd
V_DD=480V, I_D=4.5A
Gate charge total
Q_g
V_DD=480V, I_D=4.5A,
V_GS=0 to 10V
Gate plateau voltage
V_(plateau) V_DD=480V, I_D=4.5A
-
2.2
- nC
-
8.8
-
-
19 25
-
5
-V
1Limited _{only by maximum temperature}
2Repetitve _{avalanche causes additional power losses that can be calculated asPAV=EAR*f.}
3Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
4Soldering _{temperature for TO-263: 220°C, reflow}
5_{Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.}
6_{Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.}
Page 3
2003-10-02