SKW30N60HS Datasheet, PDF (9/14 Pages) Infineon Technologies AG – HIGH SPEED IGBT IN NPT-TECHNOLOGY

SKW30N60HS
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15V
1nF
C_iss
120V
480V
C_oss
10V
100pF
C_rss
5V
0V
0nC
50nC
100nC
Q_GE, GATE CHARGE
Figure 17. Typical gate charge
(I_C=30 A)
150nC
10pF
0V
10V
20V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(V_GE=0V, f = 1 MHz)
15µs
10µs
5µs
0µs
10V
11V
12V
13V
14V
V_GE, GATE-EMITETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V_CE=600V, start at T_J=25°C)
300A
250A
200A
150A
100A
50A
0 A1 _{0 V}
12V
14V
16V
18V
V_GE, GATE-EMITETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(V_CE ≤ 600V, T_j ≤ 150°C)
Power Semiconductors
9
Rev. 2 Aug-02