SKW30N60HS Datasheet, PDF (13/14 Pages) Infineon Technologies AG – HIGH SPEED IGBT IN NPT-TECHNOLOGY

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Figure A. Definition of switching times
SKW30N60HS
i,v
di_F /dt
I
F
I
rrm
t_{r r} =t_S +t_F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
Q
S
Q
F
10% I_{r r m} ^t
di /dt
90% I ^{r r}
V
R
rrm
Figure C. Definition of diodes
switching characteristics
τ_r11
T_j (t)
p(t)
r₁
τ₂
r₂
r₂
τ_rnn
r_n
T_C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L_σ =60nH
an d Stray capacity C_σ =40pF.
Power Semiconductors
13
Rev. 2 Aug-02