SKW30N60HS Datasheet, PDF (1/14 Pages) Infineon Technologies AG – HIGH SPEED IGBT IN NPT-TECHNOLOGY

SKW30N60HS
^
High Speed IGBT in NPT-technology
C
• 30% lower E_off compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
G
E
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E_off increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
V_CE
I_C
E_off)
T_j
Package
SKW30N60HS
600V
30
480µJ 150°C TO-247AC
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 600V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage static
transient (t_p<1µs, D<0.05)
Short circuit withstand time¹⁾
V_GE = 15V, V_CC ≤ 600V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j ,
T_stg
T_j(tl)
-
Ordering Code
Q67040-S4503
Value
Unit
600
V
A
41
30
112
112
41
28
112
±20
V
±30
10
µs
250
W
-55...+150
°C
175
260
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2 Aug-02